{"product_id":"gan-on-sapphire-wafer-4inch-p-gan-gallium-nitride-semiconductor-substrate","title":"GaN on Sapphire wafer 4inch P GaN Gallium nitride Semiconductor Substrate","description":"\u003ch6\u003e\u003cstrong\u003e\u003cspan style=\"color: #00aaff;\"\u003e♦️\u003cspan style=\"color: #000000;\"\u003eHigh-quality GaN wafer for Research and Experiment.\u003c\/span\u003e\u003c\/span\u003e\u003c\/strong\u003e\u003c\/h6\u003e\n\u003ch6\u003e\u003cstrong\u003e\u003cspan style=\"color: #00aaff;\"\u003e♦️\u003cspan style=\"color: #000000;\"\u003eProvide small quantities, special specifications products, and customized services\u003c\/span\u003e\u003c\/span\u003e\u003c\/strong\u003e\u003c\/h6\u003e\n\u003ch6\u003e\n\u003cstrong\u003e\u003cspan style=\"color: #00aaff;\"\u003e♦️\u003cspan style=\"color: #000000;\"\u003eGlobal shipping, secure payment, large inventory\u003c\/span\u003e\u003c\/span\u003e\u003c\/strong\u003e\u003cspan\u003e.\u003c\/span\u003e\n\u003c\/h6\u003e\n\u003ch6\u003e\u003cstrong\u003e\u003cspan style=\"color: #00aaff;\"\u003e♦️\u003cspan style=\"color: #000000;\"\u003eMinimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.\u003c\/span\u003e\u003c\/span\u003e\u003c\/strong\u003e\u003c\/h6\u003e\n\u003ch6\u003eGaN on Sapphire Specification:\u003c\/h6\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eSize: 2inch ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eMg-Doped;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eDiameter: 50.8 mm±0.3 mm ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eThickness\/Thickness STD: 4.5 ± 0.5 μm \/ \u0026lt; 3% ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eOrientation of GaN: C plane (0001) off angle toward A-axis 0.2 ± 0.1°;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eOrientation Flat of GaN: (1-100) 0 ± 0.2°, 16 ± 1 mm;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eConduction Type: P-Type;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eResistivity (300K):\u0026lt; 10 Ω·cm;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003e\u003cstrong\u003eCarrier Concentration:\u003c\/strong\u003e\u0026gt; 1 x 1017 cm -3 (doping concentration of p+GaN ≥ 5 x 1019 cm -3);\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eMobility: \u0026gt; 5cm2\/V·s ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\n\u003cstrong\u003e\u003cstrong\u003eStructure:\u003c\/strong\u003e~ 0.5 μm p+GaN\/~ 1.5 μm p-GaN \/~ 2.5 μm uGaN \/~ 25 nm uGaN \u003c\/strong\u003e\u003cstrong\u003ebuffer\/430 ±25 μm sapphire;\u003c\/strong\u003e\n\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\n\u003cstrong\u003e\u003c\/strong\u003e\u003cstrong\u003eXRD FWHMs: (0002)\u0026lt;300 arcsec,(10-12)\u0026lt;400 arcsec;\u003c\/strong\u003e\n\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eOrientation of Sapphire: C plane (0001) off angle toward M-axis 0.2 ± 0.1°;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eOrientation Flat of Sapphire: (11-20) 0 ± 0.2°, 16 ± 1 mm ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\n\u003cstrong\u003e\u003cstrong\u003eSapphire Polish: Single-side polished (SSP)\/Double-side polished (DSP)\u003c\/strong\u003e\u003c\/strong\u003e\u003cstrong\u003e;\u003c\/strong\u003e\n\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eUseableArea:\u0026gt; 90% (edge and macro defects exclusion);\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eWafer case ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch2\u003e\u003cbr\u003e\u003c\/h2\u003e\n\u003cdiv id=\"gtx-trans\" style=\"position: absolute; left: -28px; top: -18.5px;\"\u003e\n\u003cdiv class=\"gtx-trans-icon\"\u003e\u003cbr\u003e\u003c\/div\u003e\n\u003c\/div\u003e","brand":"SOKA TECHNOLOGY","offers":[{"title":"4inch \/ 6 pieces","offer_id":52816830103831,"sku":"11656005","price":4200.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0769\/9405\/2375\/files\/GaN_on_sapphire.webp?v=1780607509","url":"https:\/\/sokatec.com\/de\/products\/gan-on-sapphire-wafer-4inch-p-gan-gallium-nitride-semiconductor-substrate","provider":"Soka Technology","version":"1.0","type":"link"}