{"product_id":"gan-on-sapphire-wafer-2inch-pg-gan-substrate","title":"GaN on Sapphire wafer 2inch PG GaN Gallium nitride Semiconductor Substrate","description":"\u003ch6\u003e\u003cstrong\u003e\u003cspan style=\"color: #00aaff;\"\u003e♦️\u003cspan style=\"color: #000000;\"\u003eHigh-quality GaN wafer for Research and Experiment.\u003c\/span\u003e\u003c\/span\u003e\u003c\/strong\u003e\u003c\/h6\u003e\n\u003ch6\u003e\u003cstrong\u003e\u003cspan style=\"color: #00aaff;\"\u003e♦️\u003cspan style=\"color: #000000;\"\u003eProvide small quantities, special specifications products, and customized services\u003c\/span\u003e\u003c\/span\u003e\u003c\/strong\u003e\u003c\/h6\u003e\n\u003ch6\u003e\n\u003cstrong\u003e\u003cspan style=\"color: #00aaff;\"\u003e♦️\u003cspan style=\"color: #000000;\"\u003eGlobal shipping, secure payment, large inventory\u003c\/span\u003e\u003c\/span\u003e\u003c\/strong\u003e\u003cspan\u003e.\u003c\/span\u003e\n\u003c\/h6\u003e\n\u003ch6\u003e\u003cstrong\u003e\u003cspan style=\"color: #00aaff;\"\u003e♦️\u003cspan style=\"color: #000000;\"\u003eMinimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.\u003c\/span\u003e\u003c\/span\u003e\u003c\/strong\u003e\u003c\/h6\u003e\n\u003ch6\u003e\u003cstrong\u003eGaN on Sapphire Specification:\u003c\/strong\u003e\u003c\/h6\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eSubstrate:Sapphire ；\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eDiameter: 50.8+0.1mm ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eOrientation: C-plane 0.2 +0.1° to M-plane ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eThickness: 430+15um ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eOrientation Flat:A-plane 10.25° ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eOF Length: 16+1 mm；\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eFront Side: CMP Ra ≤ 0.2nm；\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eBack Side: Lapping (Ra: 0.6 ~ 1.2um)；\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eTTV: ≤10um；\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eBow：-10~0um；\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eWarp: ≤ 10um ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eLaser Mark: Yes；\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eEpiwafer Structure\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eLayer 2:N-GaN 2~3um;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eLayer 1:Buffer 2~3um;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eLayer 0: Substrate;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eEpitaxy Characteristics\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eTotal Epitaxy Thickness:5~6um;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eThickness Std\u0026lt;3% ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eXRD GaN (002): ≤100 arcsec;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eXRD GaN (102)≤100 arcsec ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eDislocation density :~ 1e7 cm-2;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eConductivity:N-type;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eResistivy:≤0.1 (ohm-cm);\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eSurface Roughness:Ra ≤ 0.5 nm;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eSori≤ 90 um;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch6\u003e\u003cstrong\u003eThe GaN crystal quality of this new GaN-on-Sapphire substrate and the GaN substrate are at a comparable level.\u003c\/strong\u003e\u003c\/h6\u003e\n\u003ch6\u003e\u003cstrong\u003eCurrently, PQGaN is a high-quality single-layer GaN material that can be used as a substrate. Customers can extend the GaN structure on top of it.\u003c\/strong\u003e\u003c\/h6\u003e\n\u003ch6\u003e\u003cstrong\u003eFurthermore, we can also manufacture customer-specified GaN extension structures on PQGaN substrates on your behalf if needed.\u003c\/strong\u003e\u003c\/h6\u003e\n\u003cdiv style=\"position: absolute; left: -28px; top: -18.5px;\" id=\"gtx-trans\"\u003e\n\u003cdiv class=\"gtx-trans-icon\"\u003e\u003cbr\u003e\u003c\/div\u003e\n\u003c\/div\u003e","brand":"SOKA TECHNOLOGY","offers":[{"title":"2inch \/ 5 pieces","offer_id":53498138591511,"sku":null,"price":4675.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0769\/9405\/2375\/files\/GoNonsilicon.webp?v=1780700227","url":"https:\/\/sokatec.com\/fr\/products\/gan-on-sapphire-wafer-2inch-pg-gan-substrate","provider":"Soka Technology","version":"1.0","type":"link"}