{"product_id":"gan-on-sapphire-wafer-4inch-p-gan-gallium-nitride-semiconductor-substrate","title":"Wafer GaN trên sapphire 4 inch P-GaN, đế bán dẫn nitrua gali","description":"\u003ch6\u003e\u003cstrong\u003e\u003cspan style=\"color: #00aaff;\"\u003e♦️\u003cspan style=\"color: #000000;\"\u003eWafer GaN chất lượng cao cho nghiên cứu và thí nghiệm.\u003c\/span\u003e\u003c\/span\u003e\u003c\/strong\u003e\u003c\/h6\u003e\n\u003ch6\u003e\u003cstrong\u003e\u003cspan style=\"color: #00aaff;\"\u003e♦️\u003cspan style=\"color: #000000;\"\u003eCung cấp số lượng nhỏ, sản phẩm theo thông số đặc biệt và dịch vụ tùy chỉnh\u003c\/span\u003e\u003c\/span\u003e\u003c\/strong\u003e\u003c\/h6\u003e\n\u003ch6\u003e\n\u003cstrong\u003e\u003cspan style=\"color: #00aaff;\"\u003e♦️\u003cspan style=\"color: #000000;\"\u003eVận chuyển toàn cầu, thanh toán an toàn, tồn kho lớn\u003c\/span\u003e\u003c\/span\u003e\u003c\/strong\u003e\u003cspan\u003e.\u003c\/span\u003e\n\u003c\/h6\u003e\n\u003ch6\u003e\u003cstrong\u003e\u003cspan style=\"color: #00aaff;\"\u003e♦️\u003cspan style=\"color: #000000;\"\u003eThời gian giao hàng tối thiểu trong vòng 1 tuần. Gửi qua FedEx, DHL,UPS, v.v.\u003c\/span\u003e\u003c\/span\u003e\u003c\/strong\u003e\u003c\/h6\u003e\n\u003ch6\u003eThông số kỹ thuật GaN trên Sapphire:\u003c\/h6\u003e\n\u003cul\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eKích thước: 2inch ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003ePha tạp Mg;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eĐường kính: 50.8 mm±0.3 mm ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eĐộ dày\/Độ dày STD: 4.5 ± 0.5 μm \/ \u003c 3% ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eĐịnh hướng của GaN: mặt C (0001) lệch về phía trục A 0.2 ± 0.1°;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eMặt phẳng chuẩn định hướng của GaN: (1-100) 0 ± 0.2°, 16 ± 1 mm;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eLoại dẫn: P-Type;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eĐiện trở suất (300K):\u003c 10 Ω·cm;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003e\u003cstrong\u003eNồng độ hạt tải:\u003c\/strong\u003e\u003e 1 x 1017 cm -3 (nồng độ pha tạp của p+GaN ≥ 5 x 1019 cm -3);\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eĐộ linh động: \u003e 5cm2\/V·s ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\n\u003cstrong\u003e\u003cstrong\u003eCấu trúc:\u003c\/strong\u003e~ 0.5 μm p+GaN\/~ 1.5 μm p-GaN \/~ 2.5 μm uGaN \/~ 25 nm uGaN \u003c\/strong\u003e\u003cstrong\u003eđệm\/430 ±25 μm sapphire;\u003c\/strong\u003e\n\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\n\u003cstrong\u003e\u003c\/strong\u003e\u003cstrong\u003eFWHM XRD: (0002)\u003c300 arcsec,(10-12)\u003c400 arcsec;\u003c\/strong\u003e\n\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eĐịnh hướng của Sapphire: mặt C (0001) lệch về phía trục M 0.2 ± 0.1°;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eMặt phẳng chuẩn định hướng của Sapphire: (11-20) 0 ± 0.2°, 16 ± 1 mm ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\n\u003cstrong\u003e\u003cstrong\u003eĐánh bóng Sapphire: Đánh bóng một mặt (SSP)\/Đánh bóng hai mặt (DSP)\u003c\/strong\u003e\u003c\/strong\u003e\u003cstrong\u003e;\u003c\/strong\u003e\n\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eDiện tích sử dụng:\u003e 90% (không bao gồm lỗi mép và lỗi vĩ mô);\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003cli\u003e\n\u003ch6\u003e\u003cstrong\u003eHộp đựng wafer ;\u003c\/strong\u003e\u003c\/h6\u003e\n\u003c\/li\u003e\n\u003c\/ul\u003e\n\u003ch2\u003e\u003cbr\u003e\u003c\/h2\u003e\n\u003cdiv id=\"gtx-trans\" style=\"position: absolute; left: -28px; top: -18.5px;\"\u003e\n\u003cdiv class=\"gtx-trans-icon\"\u003e\u003cbr\u003e\u003c\/div\u003e\n\u003c\/div\u003e","brand":"SOKA TECHNOLOGY","offers":[{"title":"4 inch \/ 6 món","offer_id":52816830103831,"sku":"11656005","price":4200.0,"currency_code":"USD","in_stock":true}],"thumbnail_url":"\/\/cdn.shopify.com\/s\/files\/1\/0769\/9405\/2375\/files\/GaN_on_sapphire.webp?v=1780607509","url":"https:\/\/sokatec.com\/vi\/products\/gan-tren-sapphire-wafer-4inch-p-gan-gallium-nitride-chat-nen-ban-dan","provider":"Soka Technology","version":"1.0","type":"link"}