As the global demand for high-speed data transmission skyrockets, particularly driven by the expansion of Artificial Intelligence (AI) servers and hyperscale data centers, the role of compound semiconductors has never been more critical. SAMCO, a leading innovator in semiconductor process equipment, has announced the significant expansion of its technology lineup specifically tailored for Indium Phosphide (InP) devices.
Indium Phosphide is a foundational material for next-generation optical transceivers, offering superior electron mobility and high-frequency performance compared to traditional silicon. To meet the rigorous precision and reliability requirements of these devices, SAMCO is providing a comprehensive suite of processing and deposition technologies. Their expanded portfolio includes Inductively Coupled Plasma (ICP) etching, Capacitively Coupled Plasma Reactive Ion Etching (CCP-RIE), Plasma Enhanced Chemical Vapor Deposition (PECVD), and Atomic Layer Deposition (ALD).
These systems are engineered to handle 3-inch, 4-inch, and 6-inch wafers through single-wafer processing. A standout feature of SAMCO’s equipment is its flexibility; by simply replacing reaction chamber components, the systems can easily adapt to different wafer sizes. This modularity, combined with a compact footprint, allows manufacturers to optimize cleanroom space without sacrificing technical capability.
The strategic focus on Indium Phosphide aligns with the rapid evolution of the AI infrastructure market. In 2026, the global AI optical transceiver market is projected to reach 26 billion US dollars, with 800G and 1.6T modules becoming the new standard for low-latency GPU cluster interconnects. By enhancing thin-film deposition of materials like Silicon Dioxide and Aluminum Oxide, and providing high-aspect-ratio etching for Indium Phosphide pillars and ridges, SAMCO is ensuring that device manufacturers can scale production to meet these immense market demands.
