Shin-Etsu Chemical is experiencing robust demand for its proprietary QST (Qromis Substrate Technology) substrates, a critical material for the growth of Gallium Nitride crystals. This surge is primarily driven by the accelerating development of next-generation power devices. The company has successfully expanded its lineup to include 300-millimeter wafers, alongside the existing 6-inch and 8-inch options, marking a significant milestone in semiconductor manufacturing scalability.
The industry's focus is currently shifting from traditional lateral power devices to vertical power device architectures. Vertical structures are essential for handling higher voltages and currents, making them ideal for electric vehicles and industrial applications. To support this transition, Shin-Etsu Chemical is committed to further improving crystal quality. Under a licensing agreement with QROMIS, a United States-based technology firm, Shin-Etsu not only manufactures and supplies these substrates but also offers Gallium Nitride epitaxial growth services.
The defining advantage of the QST substrate lies in its thermal properties. Unlike existing silicon substrates, which suffer from significant thermal mismatch leading to warpage and cracking, QST substrates have a Coefficient of Thermal Expansion (CTE) that closely matches that of Gallium Nitride. This thermal matching allows for the growth of thick, high-quality Gallium Nitride epitaxial layers without defects. This breakthrough is particularly vital for producing large-diameter, high-voltage vertical power devices, positioning Shin-Etsu as a key enabler in the high-efficiency power electronics market.
