Novel Crystal Technology, a leader in wide bandgap semiconductors, has officially announced the commencement of sample shipments for its 150mm diameter beta-type Gallium Oxide substrates starting in March. This milestone marks a significant leap forward from the previous 100mm standard, signaling a new era for power electronics.
The transition to 150mm (6-inch) wafers is critical for the semiconductor industry. By utilizing the Edge-defined Film-fed Growth method, or EFG method, Novel Crystal Technology leverages the advantages of melt-growth processing. This allows for rapid scaling and a more stable supply of high-quality, large-diameter substrates compared to traditional methods used for Silicon Carbide.
The industry expects this development to accelerate the mass production of beta-type Gallium Oxide power devices. These devices are prized for their high breakdown voltage and efficiency, which are essential for electric vehicles and renewable energy grids. According to the company's roadmap, 150mm epitaxial wafer samples are expected by 2027, with full-scale mass production slated for 2029. As the demand for efficient power conversion grows, Gallium Oxide is positioning itself as a cost-effective successor to existing high-power materials.
