Aluminum nitride wafer 1~2inch AIN mono high pure semiconductor substrate - Soka Technology

SOKA TECHNOLOGY

Aluminum nitride wafer 1~2inch AIN mono high pure semiconductor substrate

Angebotspreis$4,390.00
Grade:P Grade
Size:1inch
Menge:
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♦️ High-quality AIN wafer for Research and Experiment.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
AIN Wafer Specification:  
    • Diameter: 25.4mm士0.5;
    • Crystal type:2H;
    • Orientation: {0001}士0.5°;
    • Thickness: 700um±50;
    • FWHM-HRXRD@(0002)(arcsec): ≤300;
    • FWHM-HRXRD@(10-12)(arcsec): ≤200;
    • Absorption Coefficient@265nm:≤70(cm-1)
    • Surface roughness (Ra):Al face: ≤0.5nm,N face: ≤1.2um;
    • Edge Exclusion:1mm;
    • Scratches:None;
    • Edge Chips:None;
    • Usable Area:>80%;
    • Primary flat orientation:{10-10}士5.0°;
    • Secondary flat orientation:
    • 90°+5 CW from Primary Flat, as viewed from Al face,
    • 90°+5 CCW from Primary Flat, as viewed firom N face;
    • TTV≤30um;
    • Bow≤30um;
    • Wapr≤30um;
    • Cracks:on the edge, <2mm each;
    • Holes:2 allowed, <300um each;
    • Surface Finish: Al face: CMP;
    • Packing: silicon wafer case;

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