Rohm Unveils 5th Generation SiC MOSFET with 30 Percent Resistance Reduction

Rohm, a leading Japanese semiconductor manufacturer, has officially developed its fifth-generation Silicon Carbide Metal-Oxide-Semiconductor Field-Effect Transistor. This technological breakthrough achieves an approximate 30 percent reduction in on-resistance compared to conventional components. The dramatic reduction in power loss directly supports the down-sizing and higher power output required for next-generation Electric Vehicle inverters, making a significant impact on global vehicle electrification trends.

According to market dynamics and technical evolution, reducing on-resistance without compromising breakdown voltage has been a primary challenge in power electronics. Rohm successfully accomplished this by optimizing both the device trench structure and manufacturing processes, reaching industry-leading low-loss performance. To meet immediate industry demand, Rohm has been supplying bare chips ahead of schedule since last year, and is scheduled to begin providing discrete components and module samples starting July 2026.

The application sectors for these fifth-generation devices go far beyond automotive drivetrains. The rapid expansion of Artificial Intelligence servers and hyperscale data centers has created immense pressure on power supply efficiency. This new Silicon Carbide product is tailored to meet the strict energy-saving standards of these modern data facilities. Moving forward, Rohm plans to expand its product lineup across varying voltage ratings and package types while enhancing design support tools to accelerate the social implementation of Silicon Carbide technologies worldwide.