A research group comprising Oxide Power Crystal, Mipox, UJ-Crystal, A-Crystal, the National Institute of Advanced Industrial Science and Technology (AIST), and Nagoya University has successfully prototyped 6-inch p-type and 6 and 8-inch n-type Silicon Carbide (SiC) wafers, utilizing the solution growth method combined with advanced simulation technology.
This achievement marks a significant breakthrough by realizing the large-diameter production of p-type SiC wafers, a feat that was previously challenging. This development brings the practical application of next-generation ultra-high-voltage Insulated Gate Bipolar Transistors (IGBTs) closer to reality.
The research efforts included the cultivation of high-quality crystals through simulation and the establishment of optimal conditions, as well as the development of mass production processes. The project received support from Japan's New Energy and Industrial Technology Development Organization (NEDO).
This success in scaling up p-type SiC wafers is crucial for advancing power electronics, enabling more efficient and higher-voltage devices that are essential for energy-saving technologies and future power systems.
