Toshiba D&S and SICC Partner to Elevate SiC Wafer Quality

In a significant move for the semiconductor industry, Toshiba D&S and SICC have announced a strategic partnership aimed at advancing the performance and quality of SiC (Silicon Carbide) wafers for power semiconductors. This collaboration will focus on joint technological development and business cooperation to ensure a stable and high-quality supply of these critical components.

Toshiba D&S is a key player in the development of SiC devices for various applications, including server power supplies and automotive electronics. By teaming up with SICC, Toshiba D&S seeks to accelerate its device development and offer optimized solutions for these high-growth markets.

SICC brings a wealth of expertise to the partnership. As a specialist in the research, development, and production of single-crystal SiC wafers, the company is a recognized leader in the field. SICC holds a top-five position globally in related patents and has made a significant industry breakthrough by introducing the world's first 12-inch SiC wafer.

This alliance combines Toshiba D&S's deep experience in device application with SICC's cutting-edge wafer technology. The two companies are now moving forward with detailed discussions to formalize their collaboration and set the stage for future innovations in SiC power semiconductors.