The advanced power semiconductor landscape is on the cusp of a major transformation as Chinese manufacturers continue to push the boundaries of materials science. New Metals and Chemicals Corporation is set to introduce a 12-inch (300-millimeter) Silicon Carbide wafer developed by China's leading substrate maker, Tangke Blue, to the Japanese market. This breakthrough product will be showcased at the Advanced Power Semiconductor Subcommittee in Toyama City.
Tangke Blue, renowned for its high-quality, cost-competitive production, is a significant player in the global Silicon Carbide wafer market. The company plans to commence the supply of these massive 12-inch wafers in late 2024, with a targeted launch in the Japanese supply chain by 2026. This move aligns with the industry's crucial transition from 6-inch and 8-inch wafers to larger diameters, which is essential for scaling production, lowering the manufacturing cost per die, and meeting the surging global demand from electric vehicles (EVs) and renewable energy systems.
Beyond the power electronics sector, the company is also diversifying its offerings. Tangke Blue will introduce Silicon Carbide wafers tailored for Augmented Reality Glasses, with supply expected to begin in 2026. This highlights the material's superior properties—including high thermal conductivity and excellent electrical performance—making it ideal for high-frequency and high-performance applications outside of traditional power conversion.
To support this aggressive market expansion, Tangke Blue is substantially increasing its production capacity, with plans to significantly expand its annual output capacity by 2028. This rapid capacity ramp-up underscores the market's confidence in the long-term demand for Silicon Carbide.
Furthermore, the exhibition will feature an innovative approach to crystal growth: a Solution Method Silicon Carbide wafer developed by China's JingGe LingYu Semiconductor. The Solution Method, unlike the conventional Physical Vapor Transport (PVT) technique, promises lower defect density and easier diameter scaling. While this technology holds significant promise for applications in high-voltage devices like Insulated-Gate Bipolar Transistors, the text notes that challenges still exist regarding crystal quality, indicating the technology is still in a refinement phase. This inclusion demonstrates the dual-track innovation strategy in the Chinese semiconductor ecosystem: driving commercialization with mature technologies (like 12-inch wafers) while simultaneously investing in next-generation material science (like the Solution Method). The global Silicon Carbide market, projected to exceed $2.5 billion by 2030, will be heavily influenced by these advancements in large-diameter, high-quality, and cost-efficient substrate production.
