Toshiba Electronic Devices & Storage Corporation announced the mass production launch of three new 650 Volt rated Silicon Carbide (SiC) Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) in August 2025. These products adopt the space-saving Surface Mount TOLL (TO-Leadless) package, marking a significant step in the power electronics industry.
The new devices—TW027U65C, TW048U65C, and TW083U65C—are built upon Toshiba's advanced third-generation SiC MOSFET chips. The primary innovation is the package size: at just nine point nine by eleven point six eight by two point three millimeters (9.9 x 11.68 x 2.3 millimeters), the new surface-mount devices achieve a volume reduction of over eighty percent compared to conventional through-hole lead insertion packages with equivalent specifications. This miniaturization is critical for increasing power density in modern electronic systems.
Beyond size reduction, the TOLL package design offers substantial performance benefits. By having smaller parasitic inductance, these devices can achieve lower switching losses, a key factor in improving the overall efficiency of power conversion systems. Search results indicate that for a product like the TW048U65C, turn-on and turn-off losses can be reduced by approximately fifty-five percent and twenty-five percent, respectively, compared to previous Toshiba products.
These high-efficiency, compact SiC MOSFETs are specifically targeted for applications that demand high power density and energy efficiency, such as switching power supplies for servers and data centers, as well as power conditioners and inverters for renewable energy systems like solar photovoltaics.
Market Context and Technology Background: The global market for SiC power devices, including SiC MOSFETs, is experiencing robust growth, primarily driven by the surging demand for electric vehicles (EVs), renewable energy infrastructure, and industrial automation. SiC, a wide bandgap material, offers superior characteristics—including higher breakdown voltage, faster switching speed, and better thermal performance—compared to traditional silicon-based devices. Industry forecasts project a strong Compound Annual Growth Rate for the SiC MOSFET market, highlighting the material's criticality in the transition towards more efficient and sustainable power electronics. Toshiba’s third-generation SiC MOSFET chip incorporates features such as an optimized drift resistance-to-channel resistance ratio and a built-in Schottky Barrier Diode (SBD), which collectively enhance both performance and reliability, ensuring low forward voltage and suppressing variations in on-resistance. The move to the TOLL surface-mount package further capitalizes on these intrinsic SiC benefits by minimizing package-related limitations, thereby enabling higher efficiency and smaller system footprints.
