ROHM has recently unveiled a significant advancement in power electronics with the development of a 2-in-1 Silicon Carbide (SiC) module, cleverly designed by linking two separate packages. This innovative configuration is poised to become a game-changer for the industrial equipment sector, directly addressing the critical need for smaller, more efficient devices.
The new module is engineered to reduce the overall number of components and the mounting area required for industrial applications. By consolidating the functionality of two discrete packages, ROHM helps manufacturers achieve substantial equipment miniaturization and a noteworthy reduction in mounting man-hours.
Currently, the module is in mass production with a monthly capacity of 10,000 units. Furthermore, ROHM is demonstrating its commitment to the automotive industry by commencing sample shipments of products compliant with rigorous automotive reliability standards starting in October.
The new SiC module is specifically designed to meet the growing demand for higher voltages in multi-level circuits, such as 3-level NPC and 3-level T-NPC topologies. Its unique structure, which links two TO-247 packages, allows for the mounting of larger chips. Combined with a proprietary internal structure, this design achieves lower on-resistance.
Moreover, ROHM has meticulously optimized the package structure, resulting in approximately a 15% reduction in thermal resistance and a substantial 50% reduction in inductance. When used in a half-bridge configuration, the module achieves 2.3 times the power density compared to using two discrete TO-247 packages. This means that equivalent power conversion circuits can now be realized in approximately half the volume.
The product line is comprehensive, featuring four part numbers each for 750V and 1200V withstand voltages. This versatility ensures compatibility with a wide array of circuit configurations, including NPC circuits and DC/DC converters, offering engineers a powerful tool for next-generation designs.
