Silicon wafer 2inch P/N Type 1~10Ω Oxide Layer Semiconductor Substrate
Silicon wafer 2inch P/N Type 1~10Ω Oxide Layer Semiconductor Substrate
Silicon wafer 2inch P/N Type 1~10Ω Oxide Layer Semiconductor Substrate

SOKA TECHNOLOGY

Silicon wafer 2inch P/N Type 1~10Ω Oxide Layer Semiconductor Substrate

Sale price$26.90 USD
Specification:P(100) Oxide Layer 280nm
Number Of Items:1 Item
Quantity:
♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 2inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 1~10Ω;
  • Thickness: 525um±25;
  • Oxide layer: 100nm /300nm(both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;
  • Size: 2inch;
  • Method: CZ;
  • Type: N;
  • Dopant: P;
  • Orientation:100;
  • Resistivity: 1~10Ω;
  • Thickness: 525um±25;
  • Oxide layer:100nm(both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;

Business Cooperation

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