Solar Wafer P/N Type G12 210x210mm Monocrystalline
Solar Wafer P/N Type G12 210x210mm Monocrystalline
Solar Wafer P/N Type G12 210x210mm Monocrystalline

SOKA TECHNOLOGY

Solar Wafer P/N Type G12 210x210mm Monocrystalline

Sale price$420.00 USD
Quantitiy:360
Type:P Type
Quantity:
♦️High Conversion Efficiency Solar Silicon Wafer.
♦️According to demand, we can provide custom-made service.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Solar wafer Specification:
  • P Type G12 Solar wafer;
  • Method: CZ ;
  • Diameter: 295mm±0.25 ;
  • Dopant: Gallium;
  • Orientation: <100> ±3°;
  • Oxygen concentration: ≤ 1.0E18 at/cm3;
  • Carbon concentration: ≤ 5.0E16 at/cm3;
  • Right angle: 90±0.2°;
  • Thickness: 150um±20 ;
  • Resistivity: 0.4-1.1Ω;
  • Lifetime:≧15 usec;
  • Corner length: 8~9mm ;
  • Etch Pit Density: ≤500cm-2;
  • TTV:≤30um ;
  • Saw mark: ≤15um;
  • Warp: ≤50um;
  • Bow:  ≤50um
  • Edge Chip: 0.5x0.3mm less than two ;
  • N Type G12 Solar wafer
  • Method: CZ;
  • Fillet diameter: 295mm±0.25;
  • Dopant: Phosphorus;
  • Orientation: <100> ±3°;
  • Oxygen concentration: ≤ 1.0ppma;
  • Carbon concentration: ≤12ppms;
  • Right angle: 90±0.2°
  • Resistivity: 0.3-2.1Ω;
  • Lifetime:≧1000 uses(QSSPC);
  • Thickness: 120um±20;
  • TTV<30um ;
  • Saw mark: ≤15um ;
  • Warp: ≤50um;
  • Bow: ≤50um;
  • Edge Chip: 0.5x0.3mm less than two;
  • Corner length: 8~9mm ;
  • Etch Pit Density: ≤500cm-2;

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