STMicroelectronics has announced the release of its new 700-volt PowerGaN transistor family, the "700-volt PowerGaN." These gallium nitride High Electron Mobility Transistors are designed to facilitate higher efficiency and power density in demanding applications. For orders of 1,000 units, pricing ranges from approximately 0.63 dollars to 2.25 dollars per unit.
This new PowerGaN series targets applications that demand high reliability and high-power operation. Compared to conventional silicon solutions, gallium nitride technology enables systems that are smaller, lighter, and operate at cooler temperatures. This is achieved through significantly lower conduction losses and excellent switching characteristics that minimize energy loss, especially at high frequencies. Key application areas include robotics, industrial power supplies, and smart grid converters tailored for power generation, transmission, distribution, and energy storage systems.
Technically, the gallium nitride HEMT devices in this family support a continuous current range of 6 to 29 amperes. Their on-resistance—known technically as Rds-on—spans from 53 to 270 milliohms. Furthermore, these transistors possess minimal internal capacitance and low gate charge. The performance parameter known as Figure of Merit, defined as gate charge multiplied by on-resistance, vastly exceeds that of conventional silicon products. Designed to be a direct replacement for legacy silicon MOSFETs, this PowerGaN series enables higher switching frequencies. This increase in frequency allows for a substantial reduction in the size of associated magnetic components and passive components, ultimately contributing to a marked improvement in overall power density.
STMicroelectronics continues to push the boundaries of wide-bandgap technology, providing solutions that meet the evolving demands for efficiency and compact design in the industrial and power management sectors.
