The global semiconductor industry is witnessing a significant shift as Chinese enterprises accelerate the production of 12-inch Silicon Carbide substrates. While the industry has been transitioning from 6-inch to 8-inch wafers, leading Chinese companies are already making strategic breakthroughs in 12-inch technology to gain a competitive edge in cost and efficiency. Currently, more than ten Chinese firms have successfully developed 12-inch Silicon Carbide substrates, marking a new milestone in large-diameter crystal growth.
The move to 12-inch substrates is driven by the massive economic advantages they offer. Compared to the traditional 6-inch wafer, a 12-inch wafer increases the number of available chips by approximately four times. Industry leaders like Hoshine Silicon have reported that this transition can reduce the unit cost of chips by as much as 40 percent. This reduction is critical for the mass adoption of power electronics in the electric vehicle and renewable energy sectors.
Beyond cost savings, these large-format substrates are designed to meet high-end technological demands. For instance, TanKeBlue has developed 12-inch heat sink grade substrates specifically tailored for the thermal management needs of Artificial Intelligence and autonomous driving systems. Similarly, SICC’s 12-inch high-purity semi-insulating substrates are optimized for high-frequency devices, supporting the power and integration levels required for next-generation telecommunications. As China continues to expand its manufacturing capacity, the large-scale application of 12-inch Silicon Carbide technology is set to reshape the global power semiconductor landscape.
