sic substrate  6 Inch Product Grade
Silicon Carbide Substrate 8inch Procudtion/Dummy/NG Grade N Type 4H SiC Wafer IGBT
sic substrate  6 Inch Product Grade

SOKA TECHNOLOGY

Silicon Carbide Substrate 8inch Procudtion/Dummy/NG Grade N Type 4H SiC Wafer IGBT

Sale price$3,000.00 USD
Number Of Item:1 Item
Grade:Procudtion Grade
Thickness:350um
Quantity:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 8inch;
  • Diameter: 200mm±0.2;
  • Thickness: 500um±25;
  • Surface Orientation: 4 toward [11-20]±0.5°;
  • Notch orientation:[1-100]±1°;
  • Notch depth: 1±0.25mm;
  • Micropipe: <5cm2;
  • Hex Plates: area≤5%;
  • Resistivity: 0.014~0.028Ω;
  • EPD: N/A;
  • TED: N/A;
  • BPD: N/A;
  • TSD: N/A;
  • SF:    N/A;
  • TTV≤15um;
  • Warp≤60um;
  • Bow≤40um;
  • Poly areas: ≤5%;
  • Chips/Indents: Qty:2≤1mm Width and Depth;
  • Scratch: Cumulative Length≤1.5 Wafer Diameter;
  • Stain: None;
  • Wafer edge: Chamfer;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;


Business Cooperation

Germany

Contact person: ShanEmail: shan@sokatec.comTel: +49-17647655770

Japan

Contact person: Shon
Email: shon@sokatec.com
Tel:+81-9050920178

Korea

Contact person: Kim
Email: kim@sokatec.com
Tel: +82-1090065688

India

Contact person: Chraiseto
Email: chraiseto@sokatec.com
Tel: +91-9488669046

Unite Kingdom

Contact person: Elsa
Email: elsa@sokatec.com
Tel: +44-7972294236

Canada

Contact person: Sophie
Email:sophie@sokatec.com
Tel:+1-5146383126