Osaka University Develops New Method to Reduce SiC MOS Device Defects, Boosting Performance and Reliability

Researchers at Osaka University have made a significant breakthrough in semiconductor technology by developing a novel method to enhance the performance and reliability of SiC (Silicon Carbide) MOS devices. This innovation addresses a long-standing challenge in the SiC industry, paving the way for more efficient and robust power electronics.

The new technique involves a two-step diluted hydrogen thermal treatment, a standard process for silicon devices, applied both before and after the deposition of the insulating film. Crucially, this treatment is conducted at extremely high temperatures—above 1200°C. This dual-stage approach has shown remarkable results, leading to a substantial improvement in both carrier mobility and overall device reliability.

One of the key advantages of this new method is its ability to circumvent the issues associated with conventional reliability enhancement techniques. Traditional methods, such as nitrogen introduction, often lead to a decrease in device reliability over time. The Osaka University method successfully avoids this degradation. Furthermore, it also prevents reliability issues caused by the introduction of other impurities like boron and phosphorus, which are often used for doping.

By overcoming these challenges, the new technique broadens the operational conditions for SiC devices and significantly suppresses performance variations. This breakthrough is expected to accelerate the widespread adoption of SiC technology in various applications, from electric vehicles and renewable energy systems to industrial power supplies. The enhanced performance and reliability of these devices will contribute to a more stable and efficient technological landscape, solidifying SiC's role as a cornerstone material for next-generation power electronics.