SWeGaN epitaxial GaN on SiC wafer orders doubled from January to June

Sweden's SweGaN, a manufacturer of GaN on SiC epitaxial wafers, announced that its orders for QuanFINE epitaxial wafers reached 16,510,308.20 US Dollar.in the first half of 2024 (January to June). This includes three large-scale framework contracts from major players in the telecommunications and defense markets.

As a result, the order volume has doubled compared to the previous year. Additionally, the company has received customer certification for QuanFINE epitaxial wafers from semiconductor device manufacturers and has begun shipments from its new factory. QuanFINE is SweGaN's proprietary GaN on SiC epitaxial wafer suitable for GaN high electron mobility transistors.

Conventional Structure

The industry standard, Fe-doped GaN epi-wafer, high-electron, mobility transistor structure is highly popular standard for telecommunication devices – such as those found in radio base-stations and satellites. Using this structure, you receive a GaN buffer with Fe acceptors that make the GaN buffer highly resistive, i.e., low leakage current, and provides a high-power density.