Novel Crystal Technology Unveils 150 Millimeter Gallium Oxide Wafers for Next-Gen Power Electronics

The semiconductor industry is witnessing a pivotal shift as Novel Crystal Technology officially announces the sample shipment of its 150 millimeter (6 inch) Beta Gallium Oxide wafers starting March 2026. This milestone marks a significant leap forward from the current 100 millimeter standards, positioning Beta Gallium Oxide as a formidable successor to Silicon Carbide and Gallium Nitride in the high-power electronics market.

Beta Gallium Oxide possesses a superior bandgap compared to traditional wide-bandgap materials like Silicon Carbide and Gallium Nitride. This physical property allows devices to handle much higher voltages with lower energy loss, making it an ideal candidate for electric vehicle inverters, renewable energy grids, and high-voltage industrial applications. However, the path to commercial viability has always depended on achieving larger wafer diameters to reduce manufacturing costs.

Novel Crystal Technology has successfully scaled its proprietary Edge-defined Film-fed Growth (EFG) method, which was previously perfected on 100 millimeter production lines, to reach the 150 millimeter mark. According to the company's ambitious roadmap, sample shipments of 150 millimeter epitaxial wafers are scheduled for 2027, with full-scale mass production targeted for 2029. This timeline aligns with the global surge in demand for more efficient power management systems. As the industry moves toward 150 millimeter and eventually 200 millimeter formats, the cost per chip is expected to plummet, finally allowing Beta Gallium Oxide to challenge the dominance of Silicon Carbide in the global supply chain.