Silicon Carbide Substrate 6inch 4H N Type Production/Dummy Grade SiC Wafer IGBT - Soka Technology

SOKA TECHNOLOGY

Silicon Carbide Substrate 4inch 6inch Semi Insulating 4H NG Grade SiC Wafer IGBT

Angebotspreis$765.00
Size:4inch
Number Of Item:5 Items
Menge:
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♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 4inch;
  • Diameter: 100.8 mm ±0.5;
  • Thickness: 500 um±25;
  • Surface Orientation: <0001>±0.2°;
  • Primary flat orientation:[11-20]±5°;
  • Secondary flat orientation: Silicon face up 90°CW. from Prime flat±5°;
  • Micropipe: N/A;
  • Resistivity: N/A;
  • TTV≤10um;
  • Warp≤45um;
  • Bow≤≤30um;
  • Surface Roughness: Si face Ra≤0.5 nm;
  • Cracks: None;
  • Wafer edge: Bevelling;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;
The difference between NG grade and Dummy grade products mainly in the poly area on the surface.
NG grade poly area is more than 5%.
NG grade products are mainly used for equipment testing and have better cost performance.

Email

info@sokatec.com

Email

info@sokatec.com

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Warranty

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Payments

We accept payment by credit card, PayPal, bank transfer etc.

Payments

We accept payment by credit card, PayPal, bank transfer etc.

Geschäftskooperation

Amerika

Contact: Sophie
Email: sophie@sokatec.com
Tel: +1-6463916255

Vereinigtes Königreich

Contact: Elsa
Email: elsa@sokatec.com
Tel: +44-7972294236

Japan

Contact: Shon
Email: shon@sokatec.com
Tel:+81-368203586

Korea

Contact: Kim
Email: kim@sokatec.com
Tel: +82-1090065688

Indien

Contact: Chraiseto
Email: chraiseto@sokatec.com
Tel: +91-9488669046

Vietnam

Contact: Ryan
Email:nguyen@sokatec.com
Zalo: +84-915750102