3D Defect Visualization Unlocks Next-Gen Gallium Oxide Power Semiconductors

Novel Crystal Technology, in collaboration with the Fine Ceramics Center, has demonstrated a breakthrough evaluation technique that enables three-dimensional visualization of defects inside beta-type gallium oxide crystals using phase-contrast microscopy.

Gallium oxide is widely recognized as a promising ultra-wide bandgap semiconductor material capable of delivering high efficiency and high voltage breakdown strength for next-generation power electronics. However, identifying structural defects such as dislocations during the crystal growth phase has traditionally been challenging and time-consuming.

This new methodology provides high-precision mapping of defect types and spatial distributions across the material. Operable at high speeds with easy setup, the phase-contrast microscopy approach allows rapid observation across large surface areas, including full six-inch wafers.

The three-dimensional imaging revealed that while most dislocations pass straight through the crystal at slight inclinations, diverse defect behaviors—such as varying tilt angles and localized winding paths—also exist. These spatial insights will allow engineers to optimize crystal growth parameters significantly, paving the way for reliable, high-performance gallium oxide power devices.