Nagoya University and Asahi Kasei have announced a significant breakthrough in the field of next-generation semiconductors. Through a joint research initiative, they have successfully achieved the coherent growth of an Aluminum Nitride / Gallium Nitride / Aluminum Nitride High Electron Mobility Transistor (HEMT) on an Aluminum Nitride substrate. This development marks a pivotal shift in materials science for high-frequency electronics.
The core of this achievement lies in the material properties. While Gallium Nitride devices have traditionally been grown on Silicon Carbide or Silicon substrates, this new approach utilizes an Aluminum Nitride substrate. The research team demonstrated that this structure improves breakdown voltage performance by more than two times compared to conventional Gallium Nitride HEMTs. Furthermore, the device exhibits low electrical resistance and effectively suppresses current collapse, a common issue where current decreases temporarily during high-voltage operation.
Why is Aluminum Nitride so important? As a material, Aluminum Nitride possesses a wider bandgap than both Silicon Carbide and Gallium Nitride. It offers an exceptionally high breakdown electric field and superior thermal conductivity, which is crucial for dissipating heat in high-power applications. Additionally, its crystal lattice matches well with Gallium Nitride, allowing for high-quality layer growth.
This technological leap is expected to make substantial contributions to the performance of high-frequency devices used in advanced communication systems, such as 6G infrastructure, and next-generation radar systems. By leveraging the superior insulation and thermal properties of Aluminum Nitride, engineers can now push the boundaries of power and efficiency in telecommunications.
