Silicon Nitride Thermal Conductive Si3N4 Ceramics Substrate
Silicon Nitride Thermal Conductive Si3N4 Ceramics Substrate

SOKA TECHNOLOGY

Silicon Nitride Thermal Conductive Si3N4 Ceramics Substrate

セール価格$160.00 USD
尺寸:50×50×0.32mm
Quantity:10
数量:
♦️ High-quality silicon nitride conductive substrate for IGBT etc.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Si3N4 Substrate Specification:
  • Size: 114×114×0.32mm / 190×138×0.32mm ;
  • Thermal conductivity (25 ℃):  ≥80 W/(m•k);
  • Surface roughness: ≤0.8Ra ;
  • Bulk density: 3.20 ± 0.05 g/cm3 ;
  • Modulus of elasticity: 300~320 Gpa ;
  • Poisson's ratio: ≤0.29;
  • Vickers hardness: ≥14.2 Gpa ;
  • Coefficient of thermal expansion(25 ℃ ~ 500 ℃): 3.0~3.2(10-6/℃);
  • Fracture toughness: 6.0~7.0 MPa;
  • Bending strength (three-point bending): 700~800 MPa;


Silicon nitride thermal conductive substrates are widely used in the fields of LED, microelectronic welding and other fields, power transmitters, photovoltaic devices, IGBT modules, semiconductor packaging substrates, other high-power optoelectronics, and semiconductor devices.



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