Mitsubishi Electric has marked a significant milestone in its power device strategy with the completion of a new 8-inch Silicon Carbide (SiC) manufacturing facility at its Shisui Plant in Kikuchi City, Kumamoto Prefecture. The building was completed in early October and is slated to begin operations in November, following equipment installation.
This new facility is a crucial step for Mitsubishi Electric in scaling up its SiC wafer size, a key move to enhance production efficiency and meet the growing demand for high-performance power semiconductors. The company aims for sample shipments in 2026, with full-scale mass production targeted to commence around 2027.
While Mitsubishi Electric already operates three front-end power device facilities in Kumamoto, Hiroshima, and Hyogo, the Shisui Plant's new building represents a fourth base, dedicated to the large-diameter SiC production.
It is noteworthy that despite a temporary curb on business investment due to the slowdown in the electric vehicle (EV) market growth, the launch of this new SiC facility is proceeding exactly as planned. This underscores Mitsubishi Electric’s firm commitment to advancing its SiC power device technology and solidifying its position in the global market.
