Silicon wafer 4inch P/N Type 0.001~0.005Ω Oxide Layer Semiconductor Substrate
Silicon wafer 4inch P/N Type 0.001~0.005Ω Oxide Layer Semiconductor Substrate
Silicon wafer 4inch P/N Type 0.001~0.005Ω Oxide Layer Semiconductor Substrate

SOKA TECHNOLOGY

Silicon wafer 4inch P/N Type 0.001~0.005Ω Oxide Layer Semiconductor Substrate

Sale price$32.90 USD
Specification:P(100) 525um Oxide Layer 100nm
Number Of Items:1 Item
Quantity:
♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 4inch;
  • Method: CZ;
  • Type: P;
  • Dopant: B;
  • Orientation:100;
  • Resistivity: 0.001~0.005Ω;
  • Thickness: 525um±25;
  • Oxide film: 500nm (both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;
  • Size: 4inch;
  • Method: CZ;
  • Type: N;
  • Dopant: As;
  • Orientation:100;
  • Resistivity: 0.001~0.005Ω;
  • Thickness: 525um±25;
  • Oxide film: 300nm (both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;

Business Cooperation

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Tel: +1-6463916255

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