Silicon wafer 4inch N Type 0.01~0.02Ω Oxide Layer Semiconductor Substrate
Silicon wafer 4inch N Type 0.01~0.02Ω Oxide Layer Semiconductor Substrate
Silicon wafer 4inch N Type 0.01~0.02Ω Oxide Layer Semiconductor Substrate

SOKA TECHNOLOGY

Silicon wafer 4inch N Type 0.01~0.02Ω Oxide Layer Semiconductor Substrate

Sale price$29.50 USD
Specification:N(100) 525um Oxide Layer100nm
Number Of Items:1 Item
Quantity:
♦️High-quality silicon wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Silicon Wafer Specification:
  • Size: 4inch;
  • Method: CZ;
  • Type: N;
  • Dopant: Sb;
  • Orientation:100;
  • Resistivity: 0.01~0.02Ω;
  • Thickness: 450um±25/525um±25;
  • Oxide layer: 280nm /300nm(both sides);
  • TTV<10um ;
  • Surface: polished;
  • Backside: etched;
  • Packing: silicon wafer case;

Business Cooperation

Germany

Contact person: ShanEmail: shan@sokatec.comTel: +49-17647655770

Japan

Contact person: Shon
Email: shon@sokatec.com
Tel:+81-9050920178

Korea

Contact person: Kim
Email: kim@sokatec.com
Tel: +82-1090065688

India

Contact person: Chraiseto
Email: chraiseto@sokatec.com
Tel: +91-9488669046

Unite Kingdom

Contact person: Elsa
Email: elsa@sokatec.com
Tel: +44-7972294236

Canada

Contact person: Sophie
Email:sophie@sokatec.com
Tel:+1-5146383126