Japanese semiconductor giant ROHM has officially announced a strategic licensing agreement with Taiwan Semiconductor Manufacturing Company, also known as TSMC, regarding Gallium Nitride power device technology. This landmark deal marks a significant shift in the power semiconductor landscape. ROHM plans to transfer TSMC's advanced process technology to its Hamamatsu plant in Japan, aiming to establish a complete in-house production system for Gallium Nitride devices within the year 2027.
By integrating the entire manufacturing process within the group, ROHM intends to significantly strengthen its supply capacity and quality control. This move is strategically timed, as TSMC has revealed its intention to withdraw from the Gallium Nitride foundry business by July 2027. Currently, the global market for wide bandgap semiconductors is exploding, driven by the demand for higher efficiency in electric vehicles and artificial intelligence data centers. Gallium Nitride is prized for its ability to handle high voltages while reducing energy loss and physical size compared to traditional silicon.
While the existing automotive Gallium Nitride partnership between the two companies, which began in December 2024, will be phased out upon the completion of the technology transfer, they will continue to collaborate on technical innovations for high-efficiency and compact power systems. For the industry, this signals ROHM's determination to become a leading integrated device manufacturer in the next generation of power electronics.
