Silicon Nitride Thermal Substrate with Copper Cladding IGBT SiN Heat Sink
Silicon Nitride Thermal Substrate with Copper Cladding IGBT SiN Heat Sink

SOKA TECHNOLOGY

Silicon Nitride Thermal Substrate with Copper Cladding IGBT SiN Heat Sink

Angebotspreis$690.00
尺寸:114×114×0.32mm
Copper Layer:0.5mm
Quantity:10
Menge:
♦️ High-quality silicon nitride conductive substrate for IGBT etc.
♦️ Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
Copper-clad Si3N4 Substrate Specification:
  • Size: 114×114×0.32mm / 190×138×0.32mm ;
  • Thermal conductivity (25 ℃):  ≥85 W/(m•k);
  • Copper Layer: 0.5mm(Both Side);
  • Surface roughness: ≤1Ra ;
  • Bulk density: 3.20 ± 0.05 g/cm3 ;
  • Modulus of elasticity: 300~320 Gpa ;
  • Poisson's ratio: ≤0.29;
  • Vickers hardness: ≥14.2 Gpa ;
  • Coefficient of thermal expansion(25 ℃ ~ 500 ℃): 3.0~3.2(10-6/℃);
  • Fracture toughness: 6.0~7.0 MPa;
  • Bending strength (three-point bending): 700~800 MPa;
  • Production time: 3 weeks


Silicon nitride thermal conductive substrates are widely used in the fields of LED, microelectronic welding and other fields, power transmitters, photovoltaic devices, IGBT modules, semiconductor packaging substrates, other high-power optoelectronics, and semiconductor devices.



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