Silicon Carbide Substrate 6inch 8inch NG Grade N Type 4H SiC Wafer IGBT - Soka Technology
Silicon Carbide Substrate 6inch 8inch NG Grade N Type 4H SiC Wafer IGBT - Soka Technology

SOKA TECHNOLOGY

Silicon Carbide Substrate 6inch 8inch NG Grade N Type 4H SiC Wafer IGBT

Sale price$950.00
Size:6inch
Number Of Item:5 Items
Quantity:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 6inch;
  • Diameter: 150mm±0.2;
  • Thickness: 350 um±25;
  • Surface Orientation: 4°toward[11-20]±5°;
  • Primary flat orientation:[11-20]±5°;
  • Secondary flat orientation: None;
  • Micropipe: None;
  • Resistivity: None;
  • TTV≤10um;
  • Warp≤60um;
  • Bow≤40um;
  • Surface Roughness: Si face Ra≤0.5 nm;
  • Cracks: None;
  • Wafer edge: Bevelling;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;



Email

info@sokatec.com

Email

info@sokatec.com

Warranty

Guarantee product quality.

Warranty

Guarantee product quality.

Payments

We accept payment by credit card, PayPal, bank transfer etc.

Payments

We accept payment by credit card, PayPal, bank transfer etc.

Business Cooperation

United States

Contact: Sophie
Email: sophie@sokatec.com
Tel: +1-6463916255

England

Contact: Elsa
Email: elsa@sokatec.com
Tel: +44-7972294236

Japan

Contact: Shon
Email: shon@sokatec.com
Tel:+81-368203586

Korea

Contact: Kim
Email: kim@sokatec.com
Tel: +82-1090065688

India

Contact: Chraiseto
Email: chraiseto@sokatec.com
Tel: +91-9488669046

Vietnam

Contact: Ryan
Email:nguyen@sokatec.com
Zalo: +84-915750102