sic substrate  6 Inch Product Grade
Silicon Carbide Substrate 6inch NG Grade N Type 4H SiC Wafer IGBT
sic substrate  6 Inch Product Grade

SOKA TECHNOLOGY

Silicon Carbide Substrate 6inch NG Grade N Type 4H SiC Wafer IGBT

Sale price$2,250.00 USD
Number Of Item:10 Items
Quantity:
♦️High-quality SiC wafer for Research and Experiment.
♦️Provide small quantities, special specifications products, and customized services.
♦️Global shipping, secure payment, large inventory.
♦️Minimum delivery time within 1 week. Shipped by FedEx, DHL,UPS, etc.
SiC Substrate Specification:
  • Size: 6inch;
  • Diameter: 150mm±0.2;
  • Thickness: 350 um±25;
  • Surface Orientation: 4°toward[11-20]±5°;
  • Primary flat orientation:[11-20]±5°;
  • Secondary flat orientation: None;
  • Micropipe: None;
  • Resistivity: None;
  • TTV≤10um;
  • Warp≤60um;
  • Bow≤40um;
  • Surface Roughness: Si face Ra≤0.5 nm;
  • Cracks: None;
  • Wafer edge: Bevelling;
  • Surface finish: Double Side Polish, Si Face CMP;
  • Packing: Multi-wafer Cassette Or Single Wafer Container;


Business Cooperation

Germany

Contact person: ShanEmail: shan@sokatec.comTel: +49-17647655770

Japan

Contact person: Shon
Email: shon@sokatec.com
Tel:+81-9050920178

Korea

Contact person: Kim
Email: kim@sokatec.com
Tel: +82-1090065688

India

Contact person: Chraiseto
Email: chraiseto@sokatec.com
Tel: +91-9488669046

Unite Kingdom

Contact person: Elsa
Email: elsa@sokatec.com
Tel: +44-7972294236

Canada

Contact person: Sophie
Email:sophie@sokatec.com
Tel:+1-5146383126