Bosch Launches Third Generation Silicon Carbide Chips

Robert Bosch has officially begun supplying samples of its third-generation Silicon Carbide Metal Oxide Semiconductor Field Effect Transistors, available in 1200 volts and 750 volts variants. This marks a significant milestone in the automotive semiconductor industry, particularly for electric vehicles where Silicon Carbide technology plays a crucial role in extending driving range and reducing charging times.

Manufactured at their 200 millimeters production line in Reutlingen, Germany, these new components offer a 20 percent performance improvement over the previous generation while featuring a significantly smaller physical footprint. Bosch achieves this through a unique Micro Electromechanical Systems derived process, which allows for the creation of high-precision vertical structures directly on the Silicon Carbide substrate.

The development is heavily backed by the European Important Project of Common European Interest program. Through this initiative, Bosch is investing approximately three billion euros into its semiconductor business to drive research, development, and production. Furthermore, Bosch is expanding its global footprint with an additional investment of 1.9 billion euros in its new Roseville plant in the United States. This facility is expected to begin supplying samples of second-generation 8 inches Silicon Carbide devices by the end of 2026.

Having already shipped over 60 million units of its first-generation products, Bosch is aggressively scaling its operations. The company's medium-term strategy aims to reach a manufacturing capacity of hundreds of millions of units annually, solidifying its position as a dominant force in the automotive supply chain and the electric vehicle revolution.