Mitsubishi Chemical is making significant strides in the semiconductor materials sector by accelerating the production and development of high-quality Gallium Nitride (GaN) wafers. As the global demand for energy-efficient power devices surges—driven by Electric Vehicles (EVs) and data centers—the company is strategically investing in both crystal growth and processing technologies to capture market share.
Strategic Roadmap: From 6-Inch to 8-Inch
The company has outlined a clear roadmap to increase wafer size, a critical factor in reducing chip costs and improving production efficiency. Mitsubishi Chemical plans to begin sample shipments of 6-inch Gallium Nitride wafers within the fiscal year 2026. Furthermore, they have set an ambitious target to advance the development of 8-inch wafers by 2028. Moving to larger wafers allows for more chips to be produced per substrate, significantly enhancing economic viability for mass adoption.
Leveraging HVPE Technology for Superior Quality
At the core of Mitsubishi Chemical's advantage is the Hydride Vapor Phase Epitaxy (HVPE) method. Unlike standard production techniques, HVPE allows for the rapid growth of thick, high-quality crystals. Currently, the company mass-produces two key grades of wafers:
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LD Grade: Featuring a dislocation density in the range of ten to the power of five per square centimeter.
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Low Dislocation LD Grade: A premium tier with a dislocation density between ten to the power of three and ten to the power of four per square centimeter.


