Silicon Carbide Substrate 6inch 8inch NG Grade N Type 4H SiC Wafer IGBT - Soka Technology
Silicon Carbide Substrate 6inch 8inch NG Grade N Type 4H SiC Wafer IGBT - Soka Technology

SOKA TECHNOLOGY

SiC & GaN 웨이퍼 처리 비용

Sale price$2,674.00
항목 수:처리 비용
Quantity:
♦️ 연구 및 실험용 고품질 SiC 웨이퍼.
♦️ 소량, 특수사양 제품, 맞춤형 서비스 제공 .
SiC&GaN 처리:
  • SiC 웨이퍼
  • 크기: 6인치;
  • 더미 등급
  • 두께: 350um±25;
  • 희석+연마 가공;
  • 350um => 100um;
  • GaN 웨이퍼;
  • 크기: 2인치;
  • 더미 등급;
  • 두께: 400um±25;
  • 희석+연마 가공;
  • 400um => 100um


Email

info@sokatec.com

Email

info@sokatec.com

Warranty

Guarantee product quality.

Warranty

Guarantee product quality.

Payments

We accept payment by credit card, PayPal, bank transfer etc.

Payments

We accept payment by credit card, PayPal, bank transfer etc.

Business Cooperation

United States

Contact: Sophie
Email: sophie@sokatec.com
Tel: +1-6463916255

England

Contact: Elsa
Email: elsa@sokatec.com
Tel: +44-7972294236

Japan

Contact: Shon
Email: shon@sokatec.com
Tel:+81-368203586

Korea

Contact: Kim
Email: kim@sokatec.com
Tel: +82-1090065688

India

Contact: Chraiseto
Email: chraiseto@sokatec.com
Tel: +91-9488669046

Vietnam

Contact: Ryan
Email:nguyen@sokatec.com
Zalo: +84-915750102